DHARMARASU Nethaji | Temasek Laboratories, Nanyang Technological University
スポンサーリンク
概要
関連著者
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AGRAWAL Manvi
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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DHARMARASU Nethaji
Temasek Laboratories, Nanyang Technological University
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RADHAKRISHNAN K.
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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RAVIKIRAN Lingaparthi
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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Arulkumaran Subramaniam
Temasek Laboratories Nanyang Technological University
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ING Ng
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University
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LEE Kenneth.
Temasek Laboratories, Nanyang Technological University
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Ing Ng
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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ARULKUMARAN Subramaniam
Temasek Laboratories, Nanyang Technological University
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Arulkumaran Subramaniam
Temasek Laboratories, Nanyang Technological University, Singapore 637553
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Lee Kenneth.
Temasek Laboratories, Nanyang Technological University, Singapore 637553
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Radhakrishnan K.
NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Dharmarasu Nethaji
Temasek Laboratories, Nanyang Technological University, Singapore 637553
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Ravikiran Lingaparthi
NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Radhakrishnan K.
NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
著作論文
- Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
- Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
- Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)