Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• We demonstrate, for the first time, crack-free AlGaN/GaN high-electron-mobility transistors (HEMT) on 100 mm Si(111) by ammonia molecular beam epitaxy. High growth rate accelerates rapid transition from three-dimensional (3D) to two-dimensional (2D) growth and reduces the defect density. With increasing GaN buffer thickness, FWHM of GaN(002) XRD peak and dislocation density decrease. Highest electron mobilities of 1350 and 4290 cm2/V\cdots were measured at RT and 90 K, respectively. Submicron gate devices exhibited good pinch-off characteristics with a maximum drain current (I_{\text{Dmax}}) of 768 mA/mm at V_{\text{g}}= +1 V and a maximum extrinsic transconductance (g_{\text{mmax}}) of 190 mS/mm at V_{\text{D}}= 6 V.

• 2012-09-25

著者

• Arulkumaran Subramaniam

  Temasek Laboratories Nanyang Technological University

• Ing Ng

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• ING Ng

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• AGRAWAL Manvi

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• LEE Kenneth.

  Temasek Laboratories, Nanyang Technological University

• DHARMARASU Nethaji

  Temasek Laboratories, Nanyang Technological University

• RADHAKRISHNAN K.

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• RAVIKIRAN Lingaparthi

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University

• Arulkumaran Subramaniam

  Temasek Laboratories, Nanyang Technological University, Singapore 637553

• Lee Kenneth.

  Temasek Laboratories, Nanyang Technological University, Singapore 637553

• Radhakrishnan K.

  NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

• Dharmarasu Nethaji

  Temasek Laboratories, Nanyang Technological University, Singapore 637553

関連論文

• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
• Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si
• Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal--Oxide--Semiconductor-Compatible Non-Gold Metal Stack
• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)
• Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon
• Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack

スポンサーリンク