Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal--Oxide--Semiconductor-Compatible Non-Gold Metal Stack

スポンサーリンク

概要

• 論文の詳細を見る

• We have demonstrated 0.15-μm-gate-length AlGaN/GaN high-electron-mobility transistors (HEMTs) with direct-current (DC) and microwave performances for the first time using a complementary metal--oxide--semiconductor (CMOS)-compatible non-gold metal stack. Si/Ta-based ohmic contact exhibited low contact resistance (R_{\text{c}}=0.24 \Omega\cdotmm) with smooth surface morphology. The fabricated GaN HEMTs exhibited g_{\text{mmax}}=250 mS/mm, f_{\text{T}}/f_{\text{max}}=39/39 GHz, BV_{\text{gd}}=90 V, and drain current collapse {<}10%. The device Johnson's figure of merit (J-FOM = f_{\text{T}} \times BV_{\text{gd}}) is in the range between 3.51 to 3.83 THz\cdotV which are comparable to those of other reported GaN HEMTs on Si with a conventional III--V gold-based ohmic contact process. Our results demonstrate the feasibility of realizing high-performance submicron GaN-on-silicon HEMTs using a Si CMOS-compatible metal stack.

• 2013-01-25

著者

• Arulkumaran Subramaniam

  Temasek Laboratories Nanyang Technological University

• Ng Geok

  School of EEE, Nanyang Technological University, Singapore 639798

• Wang Hong

  School of EEE, Nanyang Technological University, Singapore 639798

• VICKNESH Sahmuganathan

  Temasek Laboratories@NTU, Nanyang Technological University

• Ang Kian

  Temasek Laboratories, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553

• Teo Khoon

  Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553

• KUMAR Chandramohan

  Temasek Laboratories@NTU, Nanyang Technological University

• RANJAN Kumud

  Temasek Laboratories@NTU, Nanyang Technological University

• TEO Khoon

  Temasek Laboratories@NTU, Nanyang Technological University

関連論文

• Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell : Optimization of Electrical, Optical and Surface Morphology Characteristics
• Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
• Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si
• Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal--Oxide--Semiconductor-Compatible Non-Gold Metal Stack
• Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy
• Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon
• Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack

スポンサーリンク