Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si
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概要
- 論文の詳細を見る
- 2011-10-25
著者
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Zhou Hong
School Of Life Science And Technology University Of Electronic Science And Technology Of China
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Arulkumaran Subramaniam
Temasek Laboratories@ntu Nanyang Technological University
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Ng Geok
School Of Electrical And Electronic Engineering Nanyang Technological University
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LIU Zhi
School of Electrical and Electronic Engineering, Nanyang Technological University
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Zhou Hong
School Of Electrical And Electronic Engineering Nanyang Technological University
-
Arulkumaran Subramaniam
Temasek Laboratories Nanyang Technological University
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Ng Geok
School of EEE, Nanyang Technological University, Singapore 639798
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