Ng Geok | School Of Electrical And Electronic Engineering Nanyang Technological University

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概要

• 同名の論文著者
• School Of Electrical And Electronic Engineering Nanyang Technological Universityの論文著者

関連著者

• Ng Geok

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Ng Geok

  School of EEE, Nanyang Technological University, Singapore 639798

• Ng G

  Nanyang Technological Univ. Singapore Sgp

• YOON Soon

  School of Electrical and Electronic Engineering, Nanyang Technological University

• ZHENG Hai

  School of Electrical and Electronic Engineering, Nanyang Technological University

• ZHANG Peng

  School of Electrical and Electronic Engineering, Nanyang Technological University

• MAH Kia

  School of Electrical and Electronic Engineering, Nanyang Technological University

• NG Geok

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Yoon Soon

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zhou Hong

  School Of Life Science And Technology University Of Electronic Science And Technology Of China

• Zhang Peng

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Mah Kia

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Zheng Hai

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Arulkumaran Subramaniam

  Temasek Laboratories@ntu Nanyang Technological University

• LIU Zhi

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Zhou Hong

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Arulkumaran Subramaniam

  Temasek Laboratories Nanyang Technological University

• ZHANG Peng

  School of Civil Engineering and Mechanics, Huazhong University of Science and Technology

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著作論文

• Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell : Optimization of Electrical, Optical and Surface Morphology Characteristics
• Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si

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