VICKNESH Sahmuganathan | Temasek Laboratories@NTU, Nanyang Technological University
スポンサーリンク
概要
関連著者
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Arulkumaran Subramaniam
Temasek Laboratories Nanyang Technological University
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VICKNESH Sahmuganathan
Temasek Laboratories@NTU, Nanyang Technological University
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Ng Geok
School of EEE, Nanyang Technological University, Singapore 639798
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Wang Hong
School of EEE, Nanyang Technological University, Singapore 639798
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Ang Kian
Temasek Laboratories, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553
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Teo Khoon
Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553
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KUMAR Chandramohan
Temasek Laboratories@NTU, Nanyang Technological University
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RANJAN Kumud
Temasek Laboratories@NTU, Nanyang Technological University
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TEO Khoon
Temasek Laboratories@NTU, Nanyang Technological University
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Lo Guo-Qiang
Institute of Microelectronics
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Selvaraj Susai
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ing Ng
School Of Eee Division Of Microelectronics Nanyang Technological University
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Tripathy Sudhiranjan
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Vicknesh Sahmuganathan
Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553
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Ang Kian
Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553
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Tan Joyce
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Lin Vivian
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Todd Shane
Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Lo Guo-Qiang
Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685
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ARULKUMARAN Subramaniam
Temasek Laboratories@NTU, Nanyang Technological University
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Arulkumaran Subramaniam
Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553
著作論文
- Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V2 $\Omega^{-1}$ cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
- Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
- Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal--Oxide--Semiconductor-Compatible Non-Gold Metal Stack
- Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack