Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-12-20

著者

• NAKAMURA Hiroshi

  Research Center for Advanced Science and Technology, the University of Tokyo

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Laboratory Oki Electric Industry Co. Ltd.

• Sano Y

  Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak

• Sano Yoshiaki

  Research And Development Group Oki Electric Industry Co. Lid.

• KAMINISHI Katsuzo

  Research Laboratory, Oki Electric Industry Co., Ltd.

• Kaminishi Katsuzo

  Research Laboratory Oki Electric Industry Co. Ltd.

• Kaminishi K

  Miyazaki Univ. Miyazaki‐shi Jpn

• Nakamura Hiroshi

  Research And Development Division Technical Research Loborotory Kawasaki Dockyard Co. Ltd.

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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