Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 2004-12-15

著者

• Miyoshi Makoto

  Corporate R&d Ngk Insulators Ltd.

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• SAKAI Masahiro

  Research Center for Nano-Device and System, Nagaya Institute of Technology

• ISHIKAWA Hiroyasu

  Research Center for Nano-Device and System, Nagaya Institute of Technology

• MIYOSHI Makoto

  Research Center for Nano-Device and System, Nagoya Institute of Technology

• ARULKUMARAN Subramaniam

  Research Center for Nano-Device and System, Nagoya Institute of Technology

• TANAKA Mitsuhiro

  R&D Division, NGK Insulators Ltd.

• ODA Osamu

  R&D Division, NGK Insulators Ltd.

• Nishikawa H

  Osaka Univ. Osaka Jpn

• Sakai Masahiro

  Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L

• Ishikawa H

  Kddi R&d Laboratories Inc.

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