ODA Osamu | R&D Division, NGK Insulators Ltd.
スポンサーリンク
概要
関連著者
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MIYOSHI Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
R&D Division, NGK Insulators Ltd.
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ODA Osamu
R&D Division, NGK Insulators Ltd.
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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SAKAI Masahiro
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Sakai Masahiro
Research Center For Nano-device And System Nagoya Institute Of Technology:rd Center Ngk Insulators L
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Imanishi Atsushi
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Asai Kei-ichiro
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Shibata Tomohiko
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Asai Kei-ichiro
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Miyoshi Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
著作論文
- Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy
- DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates