DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
スポンサーリンク
概要
- 論文の詳細を見る
High-crystal-quality Al0.26Ga0.74N/AlN/GaN structures with a very high mobility, such as over 2100 cm2/(V s) with a two-dimensional-electron gas (2DEG) density of approximately $1\times 10^{13}$/cm2, were grown on epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy and adopted for the fabrication of high-electron-mobility transistors (HEMTs). The fabricated devices showed good DC characteristics compared with those in conventional AlGaN/GaN HEMTs and in devices grown on sapphire substrates. Also, it was confirmed that further improvements in DC characteristics are achieved by applying recessed ohmic contacts to AlGaN/AlN/GaN HEMTs. A high extrinsic transconductance of approximately 220 mS/mm and a high drain current density of over 1 A/mm with a threshold voltage of $-4.08$ V were obtained for 1.5-μm-gate-length recessed ohmic AlGaN/AlN/GaN HEMTs on AlN/sapphire templates. In addition, it was found that the gate leakage current of HEMTs can be suppressed by using epitaxial AlN/sapphire templates as substrates.
- 2005-09-15
著者
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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MIYOSHI Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology
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TANAKA Mitsuhiro
R&D Division, NGK Insulators Ltd.
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ODA Osamu
R&D Division, NGK Insulators Ltd.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Imanishi Atsushi
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Asai Kei-ichiro
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Shibata Tomohiko
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Asai Kei-ichiro
R&D Division, NGK Insulators Ltd., Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Miyoshi Makoto
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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