Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate

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概要

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• GaN-based light emitting diodes (LEDs) with a total thickness of 4.8 μm have been grown by metal--organic chemical vapor deposition on 4-in. Si(111) substrate. The structural property has been revealed by the measurements of high-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy. It can be clarified that the LEDs in sample have the good interfaces and layer periodicities for the strained-layer superlattices and multiple quantum wells. In addition, the optical property in the light output power has been evaluated. As a result, LEDs with a maximum output power of 3.3 mW and a high saturation operating current of 400 mA have exhibited the good device performance.

• 2012-01-25

著者

• Watanabe Arata

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Watanabe Arata

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Zhu Youhua

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Chen Zhitao

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Lu Lin

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Zhu Youhua

  Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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