Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
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概要
- 論文の詳細を見る
- 一般社団法人電子情報通信学会の論文
- 2012-01-04
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Wilson A.
Research Center For Nano-device And System Nagoya Institute Of Technology
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Wakejima Akio
Research center for Nano-Device and System, Nagoya Institute of Technology
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Wakejima Akio
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric (Electron devices)
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
- Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)