Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)

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概要

• 論文の詳細を見る
• 一般社団法人電子情報通信学会の論文
• 2012-01-04

著者

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Wilson A.

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Wakejima Akio

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Wakejima Akio

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

関連論文

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• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
• Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
• AlGaN UV-B Photodetectors on AlN/sapphire template
• Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
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• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (電子デバイス)
• Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence (マイクロ波)
• Characterization of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate
• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
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• Step stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
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• Origin and Appearance of Defective Pits in the Gate--Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si

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