Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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DEGUCHI Tadayoshi
Research Laboratory, New Japan Radio Co., Ltd.
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YAMASHITA Meiichi
Research Laboratory, New Japan Radio Co., Ltd.
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WAKI Eiji
Research Laboratory, New Japan Radio Co., Ltd.
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NAKAGAWA Atsushi
Research Laboratory, New Japan Radio Co., Ltd.
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Deguchi Tadayoshi
Research Laboratory New Japan Radio Co. Ltd.
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Ishikawa Hiroyasu
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Waki Eiji
Research Laboratory New Japan Radio Co. Ltd.
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Nakagawa Atsushi
Research Laboratory New Japan Radio Co. Ltd.
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Nakagawa Atsushi
Research Laboratories Aquaculture Center Kyowa Hakko Kogyo Co. Ltd
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Yamashita Meiichi
Research Laboratory New Japan Radio Co. Ltd.
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Nakagawa Atsushi
Research Laboratories Aquaculture Center Kyowa Hakko Kogyo
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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