InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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概要
- 論文の詳細を見る
Lattice-matched In_<0.18>Al_<0.82>N/GaN HEMT structures were grown on 4-inch-diameter silicon substrates by MOCVD. The samples showed a good in-wafer uniformity of alloy composition, layer thicknesses, and 2DEG properties. A 2DEG density of higher than 2.5 x 10^<13>/cm^2 and a low sheet resistance of approximately 250 Ω/sq were achieved for the MOCVD epiwafers. The breakdown voltage of samples was also confirmed to be higher than 600 V for a sample with a total film thickness of 3 urn. HEMTs were successfully fabricated using the MOCVD epiwafers and exhibited good pinch-off characteristics. The maximum source-drain current density and the maximum extrinsic transconductance were measured to be approximately 0.7A/mm and 250 mS/mm, respectively, for 1.5-μm-gate-length HEMTs.
- 2010-06-23
著者
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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江川 孝志
名古屋工業大学極微デバイス機能システム研究センター
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江川 孝志
名古屋工業大学工学部附属極微構造デバイス研究センター
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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MIYOSHI Makoto
NGK INSULATORS, LTD.
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SUMIYA Shigeaki
NGK INSULATORS, LTD.
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ICHIMURA Mikiya
NGK INSULATORS, LTD.
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SUGIYAMA Tomohiko
NGK INSULATORS, LTD.
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MAEHARA Sota
NGK INSULATORS, LTD.
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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Maehara Sota
Ngk Insulators Ltd.
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Ichimura Mikiya
Ngk Insulators Ltd.
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Sumiya Shigeaki
Ngk Insulators Ltd.
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Sugiyama Tomohiko
Ngk Insulators Ltd.
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Miyoshi Makoto
Ngk Insulators Ltd
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
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- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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- GaN系MISダイオードにおける絶縁膜及び界面の評価(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- GaN系MISダイオードにおける絶縁膜及び界面の評価(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
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- Si基板上へのGaN単結晶の成長とデバイス応用
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価 (レーザ・量子エレクトロニクス)
- GaN上にALD成膜したAl?O?を用いたMISダイオードの電気的特性 (レーザ・量子エレクトロニクス)
- GaN系MISダイオードにおける絶縁膜及び界面の評価
- 透明ゲートAlGaN/GaN HEMTを用いた紫外線フォトディテクタ
- GaN系MISダイオードにおける絶縁膜及び界面の評価
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)