Sumiya Shigeaki | Ngk Insulators Ltd.
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概要
関連著者
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Sumiya Shigeaki
Ngk Insulators Ltd.
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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江川 孝志
名古屋工業大学極微デバイス機能システム研究センター
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江川 孝志
名古屋工業大学工学部附属極微構造デバイス研究センター
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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MIYOSHI Makoto
NGK INSULATORS, LTD.
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SUMIYA Shigeaki
NGK INSULATORS, LTD.
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ICHIMURA Mikiya
NGK INSULATORS, LTD.
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SUGIYAMA Tomohiko
NGK INSULATORS, LTD.
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MAEHARA Sota
NGK INSULATORS, LTD.
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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Maehara Sota
Ngk Insulators Ltd.
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Ichimura Mikiya
Ngk Insulators Ltd.
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Sugiyama Tomohiko
Ngk Insulators Ltd.
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Miyoshi Makoto
Ngk Insulators Ltd
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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江川 孝志
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa T
Department Of Neuropharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa Takashi
Pharmaceutical Research Center Meiji Seika Kaisha Ltd.
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Miyoshi Makoto
Ngk Insulators Ltd.
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酒井 佑輔
名古屋工業大学極微デバイス機能システム研究センター
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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Zhu Youhua
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Shigeaki Sumiya
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Yusuke Sakai
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Sakai Yusuke
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Mitsuhiro Tanaka
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Youhua Zhu
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Makoto Miyoshi
NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya 466-8530, Japan
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Takashi Egawa
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
著作論文
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates