InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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概要
- 論文の詳細を見る
Lattice-matched In_<0.18>Al_<0.82>N/GaN HEMT structures were grown on 4-inch-diameter silicon substrates by MOCVD. The samples showed a good in-wafer uniformity of alloy composition, layer thicknesses, and 2DEG properties. A 2DEG density of higher than 2.5 x 10^<13>/cm^2 and a low sheet resistance of approximately 250 Ω/sq were achieved for the MOCVD epiwafers. The breakdown voltage of samples was also confirmed to be higher than 600 V for a sample with a total film thickness of 3 urn. HEMTs were successfully fabricated using the MOCVD epiwafers and exhibited good pinch-off characteristics. The maximum source-drain current density and the maximum extrinsic transconductance were measured to be approximately 0.7A/mm and 250 mS/mm, respectively, for 1.5-μm-gate-length HEMTs.
- 2010-06-23
著者
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Miyoshi Makoto
Corporate R&d Ngk Insulators Ltd.
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江川 孝志
名古屋工業大学極微デバイス機能システム研究センター
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江川 孝志
名古屋工業大学工学部附属極微構造デバイス研究センター
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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MIYOSHI Makoto
NGK INSULATORS, LTD.
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SUMIYA Shigeaki
NGK INSULATORS, LTD.
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ICHIMURA Mikiya
NGK INSULATORS, LTD.
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SUGIYAMA Tomohiko
NGK INSULATORS, LTD.
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MAEHARA Sota
NGK INSULATORS, LTD.
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TANAKA Mitsuhiro
NGK INSULATORS, LTD.
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江川 孝志
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa T
Department Of Neuropharmacology Faculty Of Pharmaceutical Sciences Fukuoka University
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Maehara Sota
Ngk Insulators Ltd.
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Egawa Takashi
Pharmaceutical Research Center Meiji Seika Kaisha Ltd.
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Miyoshi Makoto
Ngk Insulators Ltd.
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Ichimura Mikiya
Ngk Insulators Ltd.
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Sumiya Shigeaki
Ngk Insulators Ltd.
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Tanaka Mitsuhiro
Ngk Insulators Ltd.
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Sugiyama Tomohiko
Ngk Insulators Ltd.
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Tanaka Mitsuhiro
Corporate R&d Ngk Insulators Ltd.
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Miyoshi Makoto
Ngk Insulators Ltd
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
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- Si基板上AlGaN/GaN HEMTの高耐圧化(窒化物及び混晶半導体デバイス)
- Si基板上GaN-HEMTによる5GHz50W出力電力特性(窒化物及び混晶半導体デバイス)
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- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- 4inch径Si基板上に作製した四元混晶InAlGaN/GaN HEMTエピ構造の特性評価(窒化物及び混晶半導体デバイス)
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- Si基板上p-InGaN/AlGaN/GaN HEMTのノーマリオフ特性(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- Si基板上p-InGaN/AlGaN/GaN HEMTのノーマリオフ特性(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
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- DLTS法によるSi(111)基板上n-GaN中の深い準位の測定(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- DLTS法によるSi(111)基板上n-GaN中の深い準位の測定(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- Si基板上GaN-HEMTによる5GHz50W出力電力特性(窒化物及び混晶半導体デバイス)
- Si基板上GaN-HEMTによる5GHz50W出力電力特性(窒化物及び混晶半導体デバイス)
- C-10-13 熱抵抗を最適化したSi基板上GaN-HEMTのRF特性(C-10.電子デバイス,一般セッション)
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- AlNテンプレート上高効率AlInN紫外線受光素子 (電子部品・材料)
- AlNテンプレート上高効率AlInN紫外線受光素子 (電子デバイス)
- Si基板上AlGaN/GaN HEMTの高耐圧化(窒化物及び混晶半導体デバイス)
- Si基板上AlGaN/GaN HEMTの高耐圧化(窒化物及び混晶半導体デバイス)
- C-10-3 ECRスパッタを用いた絶縁ゲートAlGaN/GaN HFETのDC特性評価(C-10.電子デバイス,一般セッション)
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- Si(111)基板上AlGaN/GaN HEMT構造の多層膜構造検討による厚膜化(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)
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- Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs
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- Studies of Electron Beam Evaporated SiO_2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
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- Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures
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- Improvement in Performance of AlGaN/GaN HFETs by Utilizing a Low-Temperature GaN Cap Layer
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- Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
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- First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition
- AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature
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- ECRスパッタSiNの膜質がSiN/AlGaN/GaN MIS-HFET特性に与える影響
- Si基板上AlGaN/GaNヘテロ構造に関する研究
- 透明ゲートAlGaN/GaN HEMTを用いた紫外線フォトディテクタ(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- 透明ゲートAlGaN/GaN HEMTを用いた紫外線フォトディテクタ(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- 透明ゲートAlGaN/GaN HEMTを用いた紫外線フォトディテクタ(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- GaN系MISダイオードにおける絶縁膜及び界面の評価(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- GaN系MISダイオードにおける絶縁膜及び界面の評価(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- GaN系MISダイオードにおける絶縁膜及び界面の評価(窒化物半導体光・電子デバイス・材料,関連技術,及び一般)
- CT-2-4 Si基板上GaN結晶成長(CT-2.ワイドギャップ半導体パワーデバイスの現状と展望,チュートリアルセッション,ソサイエティ企画)
- Si基板上へのGaN単結晶の成長とデバイス応用
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価 (レーザ・量子エレクトロニクス)
- GaN上にALD成膜したAl?O?を用いたMISダイオードの電気的特性 (レーザ・量子エレクトロニクス)
- GaN系MISダイオードにおける絶縁膜及び界面の評価
- 透明ゲートAlGaN/GaN HEMTを用いた紫外線フォトディテクタ
- GaN系MISダイオードにおける絶縁膜及び界面の評価
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- Si基板上GaN系HEMTにおける光照射時の過渡電流評価(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)
- GaN上にALD成膜したAl_2O_3を用いたMISダイオードの電気的特性(窒化物及び混晶半導体デバイス,及び一般)