Novel quaternary AlInGaN/GaN HFET grown by MOCVD on sapphire substrate
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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JIANG Hao
Research Center for Nano-Device and System, Nagoya Institute of Technology
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LIU Yang
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Liu Yang
Research Center For Nano-device And System Nagoya Institute Of Technology
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Liu Y
Division Of Cancer Immunology Department Of Pathology Ohio State University Medical Center
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang Hao
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Liu Yang
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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