Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Umeno Masayoshi
Department Of Electronic Engineering Chubu University
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Zhao Guang-yuan
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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ZHAO Gangyuan
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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趙 廣元
名古屋工業大学・ベンチャー・ビジネス・ラボラトリー
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno M
Nagoya Inst. Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
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- Novel Low-Cost Solid-State Heterojunction Solar Cell Based on TiO_2 and Its Modification for lmproved Efficiency
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- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
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- Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
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- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
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- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
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- Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
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