Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-07-15
著者
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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JIANG Hao
Research Center for Nano-Device and System, Nagoya Institute of Technology
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DOU Yanbo
Research Center for Nano-Device and System, Nagoya Institute of Technology
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SHAO Chunlin
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Shao Chun
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Shao C
Research Center For Nano-device And System Nagoya Institute Of Technology
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Dou Yanbo
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jiang H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo T
Ulvac Inc. Shizuoka Jpn
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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