High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• A high-efficiency GaAs/Si mornolithic three-termirtal cascade solar cell is proposed and fabricated by the metalorganic chemical vapor deposition (MOCVD) method and thermal diffusion method. The quantum efficiency in the long wavelength region was improved by using p-Si substrates with the resistivity of 10 Ω・cm as the Si bottom cells. Adopting a graded band-gap layer (GBL) of Al_xGa_<1-x>As, the collection efficiency of the GaAs top cell was increased considerably. A total conversion efficiency of 19.1% was achieved at the AM0 condition for the GaAs/Si three-terminal cascade solar cell.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• SOGA Tetsuo

  Instrument and Analysis Center, Nagoya Institute of Technology

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• UMENO Masayoshi

  Department of electrical and Computer Engineering, Nagoya Institute of Technology

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Soga T

  Nagoya Inst. Technol. Nagoya Jpn

• Soga Tetsuo

  Instrument And Analysis Center Nagoya Institute Of Technology

• YANG Mingju

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Yang M

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Yang Mingju

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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