High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-03-01
著者
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Jimbo T
Research Center For Nano-device And System Nagoya Institute Of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Egawa T
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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LIU Yang
Research Center for Nano-Device and System, Nagoya Institute of Technology
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ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Liu Yang
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Jimbo T
Nagoya Inst. Technology Nagoya Jpn
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Liu Yang
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Ishikawa Hiroyasu
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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