A comparison on the Electrical Characteristics of SiO_2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal-Oxide/Insulator-Semiconductor High-Electron Mobility-Transistors

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概要

• 論文の詳細を見る
• 2005-07-15

著者

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Arulkumaran Subramanium

  Research Center For Nano-devices And System Nagoya Institute Of Technology

• Sano Yoshiaki

  Advance Device Laboratory Corporate Research And Development Center Oki Electric Industry Co. Ltd.

• BALACHANDER Krishnan

  Research Center for Nano-Devices and System, Nagoya Institute of Technology

• BASKAR Krishnan

  Crystal Growth Centre, Anna University

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