Arulkumaran Subramanium | Research Center For Nano-devices And System Nagoya Institute Of Technology
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概要
関連著者
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Arulkumaran Subramanium
Research Center For Nano-devices And System Nagoya Institute Of Technology
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Sano Yoshiaki
Advance Device Laboratory Corporate Research And Development Center Oki Electric Industry Co. Ltd.
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BASKAR Krishnan
Crystal Growth Centre, Anna University
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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BALACHANDER Krishnan
Research Center for Nano-Devices and System, Nagoya Institute of Technology
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Balachander Krishnan
Research Center For Nano-devices And System Nagoya Institute Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Baskar Krishnan
Crystal Growth Centre, Anna University, Chennai-600 025, India
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Balachander Krishnan
Research Center for Nano-Devices and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Sano Yoshiaki
Advance Device Laboratory, Corporate Research and Development Center, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa-cho, Hachioji, Tokyo, Japan
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Egawa Takashi
Research Center for Nano-Devices and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
著作論文
- A comparison on the Electrical Characteristics of SiO_2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal-Oxide/Insulator-Semiconductor High-Electron Mobility-Transistors
- A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors