Sano Yoshiaki | Advance Device Laboratory, Corporate Research and Development Center, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa-cho, Hachioji, Tokyo, Japan

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概要

関連著者

Arulkumaran Subramanium
Research Center For Nano-devices And System Nagoya Institute Of Technology
Sano Yoshiaki
Advance Device Laboratory Corporate Research And Development Center Oki Electric Industry Co. Ltd.
BASKAR Krishnan
Crystal Growth Centre, Anna University
Balachander Krishnan
Research Center For Nano-devices And System Nagoya Institute Of Technology
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
Baskar Krishnan
Crystal Growth Centre, Anna University, Chennai-600 025, India
Balachander Krishnan
Research Center for Nano-Devices and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
Sano Yoshiaki
Advance Device Laboratory, Corporate Research and Development Center, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa-cho, Hachioji, Tokyo, Japan
Egawa Takashi
Research Center for Nano-Devices and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

著作論文

A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

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