High-Temperature Behaviors of GaN Schottky Barrier Diode
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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NAKAMURA Kouichi
Department of Morphological Brain Science, Graduate School of Medicine, Kyoto University
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JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Umeno M
Nagoya Inst. Technology
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Nakamura Kouichi
Department Of Morphological Brain Science Graduate School Of Medicine Kyoto University:core Research
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Nakamura Kouichi
Department Of Civil And Environmental Engineering Nagaoka University Of Technology
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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