Etching Technique to Reveal Dislocations in Thin GaAs Films Grown on Si Substrates : Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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Jimbo Takashi
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology:research Ce
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Soga T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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NISHIKAWA Hironobu
Department of Physics, Nagoya Institute of Technology
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MIKURIYA Nobuo
Department of Physics, Nagoya Institute of Technology
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JINBO Takashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Mikuriya Nobuo
Department Of Physics Faculity Of Science And Engineering Meijo University
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Nishikawa Hironobu
Department Of Physics Nagoya Instite Of Technology
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Nishikawa Hironobu
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
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