Meltback of GaAs_<0.6>P_<0.4> Substrate in LPE Growth of InGaAsP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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UMENO Masayoshi
Department of electrical and Computer Engineering, Nagoya Institute of Technology
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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Sakai S
Tokushima Univ. Tokushima Jpn
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Sakai S
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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FURUTA Shigeru
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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FUJII Sadao
Department of Electric and Computer Engineering, Nagoya Institute of Technology
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Fujii Syuitsu
Adtec Co. Ltd.
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Sakai Shiro
Graduate School Of Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai S
Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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Furuta Shigeru
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Fujii S
Adtec Plasma Technol. Co. Ltd. Fukuyama Jpn
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Fujii Sadao
Department of Chemistry, Faculty of Science, Tohoku University
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