Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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NAOI Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Li H‐d
Shanghai Inst. Ceramics Chinese Acad. Sci. Shanghai Chn
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Li Hongdong
Satellite Venture Business Laboratory The University Of Tokushima
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BAI Jie
Department of Electrical and Electronic Engineering, University of Tokushima
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WANG Tao
Nitride Semiconductors Co., Ltd.
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LIU Yuhuai
Satellite Venture Business Laboratory, University of Tokushima
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SAKAI Shiro
Department of Electrical and Electronic Engineering, University of Tokushima
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BAI Jie
Satellite Venture Business Laboratory, The University of Tokushima
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Bai Jie
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai S
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Lacroix Y
Univ. Tokushima Tokushima Jpn
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Lacroix Yves
Satellite Venture Business Laboratory The University Of Tokushima
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Lee Young-bae
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Wang T
Department Of Chemistry University Of Science And Technology Of China
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Liu Yuhuai
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Naoi Y
Univ. Tokushima Tokushima Jpn
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Naoi Yoshiki
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Bai Jie
Department Of Cell Biology And Medical Genetics The First Military Medical University
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Wang Tao
Satellite Venture Business Laboratory The University Of Tokushima
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Naoi Y
Department Of Electrical And Electronic Engineering The University Of Tokushima
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Li H
Satellite Venture Business Laboratory The University Of Tokushima
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Sakai Shiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Sakai S
Department Of Chemistry Graduate School Of Engineering Science Osaka University
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Liu Yuhuai
Satellite Venture Business Laboratory The University Of Tokushima
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Li HD
Satellite Venture Business Laboratory, University of Tokushima
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Naoi Yoshiki
Department of Electrical and Electronic Engineering, The University of Tokushima
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Sakai Shiro
Department of Electrical and Electronic Engineering, The University of Tokushima
関連論文
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- Mid-Infrared Photoluminescence from Liquid Phase Epitaxial InAs_Sb_y/InAs Multilayers
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Ohmic Contact to P-Type GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- Magnetoresistance of Annealed CoNb/Cu Multilayers with Amorphous CoNb Magnetic Layers
- Photoluminescence Properties of Sodium Incorporated in CuInSe_2 Thin Films
- Role of Dislocation in InGaN Phase Separation
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP
- A Novel Method of Bulding a Compositional Non-Uniformity in an InGaN Layer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Electron Microscopic Study on the Initial Stages of (111)-Oriented Diamonds Grown on Pt Substrates
- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
- Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
- Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
- Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
- High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- Growth of InAsP on InP by Liquid Phase Electroepitaxy
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
- Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
- Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
- Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
- Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
- A Digital Method of Gas Laser Etching for Oxide Superconductors
- Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
- Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
- Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
- Simplified Dual Channel Optical Trarnsmission Using Integrated Light Emitters and Photodetectors
- Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
- Optical Properties of Lead Lanthanum Zirconate Titanate Amorphous Ferroelectric-Like Thin Films
- Nucleation Control in the Growth of Bulk GaN by Sublimation Method
- Transmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
- Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum(Al II)(Atomic and Molecular Physic)
- Theoretical Study of Energy Levels and Transition Probabilities of Singly Ionized Aluminum (Al II)
- Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- MOCVD Growth of InP Using Plasma Pre-Cracking
- Evaluation of Surface Roughness Parameters of Metal Films by Light Scattering Technique
- Very Low Dark Current P-p-P Base InGaAsP/InP Phototransistors
- Theoretical Analysis of Simplified Four Wavelength Division Solar Cell System
- Wavelength Division GaAlAs/GaAs Solar Cells Grown by MOCVD : II-1: COMPOUND SOLAR CELLS
- Al0.17Ga0.83N film using middle-temperature intermediate layer grown on (0001) sapphire substrate by metal-organic chemical vapor deposition
- AlGaN/GaN high electron mobility transistor with thin buffer layers
- Dislocation reduction in GaN layer by introducing GaN-rich GaNP intermediate layers
- Growth of AlN and GaN by metalorganic chemical vapor deposition on BP synthesized by flux method
- Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition