Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-15

著者

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushima

• Sakai S

  Electrotechnical Lab. Ibaraki Jpn

• Sakai S

  Tokushima Univ. Tokushima Jpn

• Sakai S

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Sakai S

  Department Of Electrical And Electronic Engineering The University Of Tokushinna

• Sakai S

  Electrotechnical Lab. Ibaraki

• Kato K

  Shizuoka Johoku Senior High School Shizuoka Jpn

• Sakai S

  Department Of Electrical And Electronic Engineering Tokushima University

• Sakai Shiro

  Graduate School Of Engineering The University Of Tokushima

• Sakai S

  Faculty Of Education Shinshu University:(present Address)department Of Materials Science And Chemica

• Sakai S

  Sci. Univ. Tokyo Tokyo Jpn

• Kato Kinya

  Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation

• Tanaka Keiji

  Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation

• Tsuru Shinji

  Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation

• Sakai Shigenobu

  Interdisciplinary Research Laboratories, Nippon Telegraph and Telephone Corporation

• Tsuru Shinji

  Interdisciplinary Research Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• グレーティングカップリング多重励起型表面プラズモン共鳴センサー(発光・表示記録用有機材料およびデバイス・一般)
• グレーティングカップリング多重励起型表面プラズモン共鳴センサー(発光・表示記録用有機材料及びデバイス・一般)
• グレーティングカップリング多重励起型表面プラズモン共鳴センサー(発光・表示記録用有機材料及びデバイス・一般)
• AFMナノリソグラフィによる導電性高分子前駆体の局所表面形状操作(有機材料・一般)
• 交互吸着法による有機色素-カーボンナノチューブ複合超薄膜の作製と評価(有機薄膜・複合膜とデバイス応用,一般)
• 五酸化バナジウム/銅フタロシアニン薄膜トランジスタの作製と特性評価(有機材料・薄膜・界面・デバイス/フィルムベースデバイスのための界面制御とプロセス技術)
• 光導波路型表面プラズモン共鳴および水晶振動子微量天秤法を用いた複合蒸気センシング
• 光導波路型表面プラズモン共鳴および水晶振動子微量天秤法を用いた複合蒸気センシング(有機薄膜・複合膜とデバイス応用,一般)
• アゾベンゼン分子薄膜の近接場光加工とサブミクロン物質の配列制御(薄膜プロセス・材料,一般)
• 細管内金属ワイヤ電極を用いたエレクトロスピニング法による高分子ファイバーの作製(薄膜プロセス・材料,一般)
• CS-4-7 ポリ(3-アミノベンジルアミン)を用いた電気化学-表面プラズモン共鳴分光法によるカテコールアミンの検出(CS-4.有機・バイオデバイスに向けた界面の役割,シンポジウムセッション)
• ナノ構造制御有機薄膜の表面プラズモン励起と放射光
• CuPc薄膜FETへのV_2O_5薄膜の積層による効果
• CuPc薄膜FETへのV_2O_5薄膜の積層による効果(機能性有機薄膜,一般)
• Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
• High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
• V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
• Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
• GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
• Thermal Stress and Dislocation Density in Undercut GaAs on Si
• Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
• Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
• Zinc Diffusion in Al_Ga_As Grown on Si Substrate
• A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
• Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
• Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes
• Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
• Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
• Ohmic Contact to P-Type GaN
• Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
• Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
• Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
• Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
• Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
• Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
• Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
• LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
• Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
• Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
• Surface Smoothing Mechanism of AIN Film by Initially Alternating Supply of Ammonia
• Role of Dislocation in InGaN Phase Separation
• Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
• Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
• GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
• Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vpor Deposition
• Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
• Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
• Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
• MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
• MOCVD Growth of GaAs_P_ on Si Substrate
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
• Mechnism of MOCVD Growth for GaAs and AlAs
• Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
• Ellipsometric Studies on Sputter-Damaged Layer in n-InP
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganie Chemical Vapor Deposition
• X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
• Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
• Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
• Al_Ga_N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition
• Optical Properties of Bound Excitons and Biexcitons in GaN(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Reactive Ion Etching of GaN and Al_xGa_N Using Cl_2/CH_4/Ar Plasma
• Excitonic Emissions under High Excitation of Hexagonal GaN Single Crystal Grown by Sublimation Method
• Selective Etching of GaN over Al_xGa_N Using Reactive Ion Plasma of Cl_2/CH_4/Ar Gas Mixture
• High Temperature Reactive Ion Etching of GaN and AlGaN Using Cl_2 and CH_4 Plasma
• Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
• Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
• Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
• Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
• Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
• Dependence of Electrically Induced Strain on Orientation and Composition in Pb(Zr_xTi_)O_3 Films
• Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth
• Expansion Behavior of Bubbles in Silica Glass Concerning Czochralski (CZ) Si Growth
• Structure and Piezoelectric Properties of 0.9 Pb(Zr,Ti)O_3-0.1 Pb(Mg,Nb)O_3 Films Prepared by Metalorganic Deposition Process
• Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure
• Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method
• A Digital Method of Gas Laser Etching for Oxide Superconductors
• Observation of Electrical Write/Erase Operations for a Memory-Type Polyrmer-Dispersed Cholesteric Liquid Crystal
• Characteristics of Right- and Left-Handed Polymer-Dispersed Cholesteric Liquid Crystals
• Reflective Color Display Using Polymer-Dispersed Cholesteric Liquid Crystal
• Color Image Formation Using Polymer-Dispersed Cholesteric Liquid Crystal
• Multipage Display Using Stacked Polymer-Dispersed Liquid Crystal Films
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
• Molecular Beam Epitaxy Fabrication of SrTiO_3 and Bi_2Sr_2CaCu_2O_8 Heterostructures Using a Novel Reflection High-Energy Electron Diffraction Monitoring Technique
• RHEED Intensity Monirored Growth of Bi-Sr-Ca-Cu-O Superconductors
• Laser Etching of Bi-Sr-Ca-Cu-O Superconducting Thin Films
• Fluxon Transfer Device
• Fluxon Divider
• Fluxon Feedback Oscillator
• Fluxon Observation Using a Josephson Sampler
• Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
• Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
• Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
• Role of Dislocation in InGaN/GaN Quantum Wells Grown on Bulk GaN and Sapphire Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• MOCVD Growth of InP Using Plasma Pre-Cracking
• A Direct Coupled Josephson Sampler

もっと見る 閉じる

スポンサーリンク