Fluxon Observation Using a Josephson Sampler
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-08-20
著者
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Sakai S
Tokushima Univ. Tokushima Jpn
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AKOH Hiroshi
Electrotechical Laboratory (ETL)
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HAYAKAWA Hisao
Electrotechnical Laboratory
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Sakai Shigeki
Electrotechnical Laboratory
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Sakai Shigeki
Electro Technical Laboratory
関連論文
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- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- Improved abrication Method for Nb/Al/AIO_x/Al/Nb Superconducting Tunnel Junctions as X-Ray Detectors
- Properties of Substrate Phonon Events in Superconducting Tunnel Junctions Induced by X-Ray Absorption
- GaAs / AlGaAs Light Emitters Fabricated on Undercut GaAs on Si
- Thermal Stress and Dislocation Density in Undercut GaAs on Si
- Photoluminescence Dark Spot Dynamics in GaAs Grown on Si
- Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate
- Zinc Diffusion in Al_Ga_As Grown on Si Substrate
- A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector
- Comparison and Investigation of Ohmic Characteristics in Ni/AuZn and Cr/Auzn to p-GaN
- Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN
- Structures for Thermal Stress Reduction in GaAs Layers Grown on Si Substrate
- Stress Distribution Analysis in Structured GaAs Layers Fabricated on Si Substrates
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
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- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
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- Response of Large Nb-Based Tunnel Junction to X-Rays
- Detection of Synchrotron Radiation by Nb-Based Superconducting Tunnel Junctions
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
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- Fabrication of High Quality Superconducting Tunnel Junctions
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
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- Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO_3 Thin Films Grown by Molecular Beam Epitaxy
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- Laser Etching of Bi-Sr-Ca-Cu-O Superconducting Thin Films
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- Fluxon Divider
- Fluxon Feedback Oscillator
- Fluxon Observation Using a Josephson Sampler
- Effect of GaNP Buffer Layer on AlGaN Epilayers Deposited on (0001) Sapphire Substrates by Metalorganic Chemical Vapor Deposition
- Improvement in Parameter Spreads of YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions
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- Study of YBCO/Au Surface Using Low-Temperature Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
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- A New Fabrication Process of Superconducting Nb Tunnel Junctions with Ultralow Leakage Current for X-Ray Detection
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- Effect of the Critical Current Density and the Junction Size on the Leakage Current of Nb/Al-AlO_x/Nb Superconducting Tunnel Junctions for Radiation Detection
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- Fabrication of High Quality NbN/Pb Josephson Junction : C-2: JOSEPHSON DEVICES
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