Recent Advances in Josephson Material and Device : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
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関連論文
- Dependence of Acoustoelectric Current Oscillation in InSb on Azimuthal Angle of Transverse Magnetic Field
- Acoustoelectric Current Oscillation in InSb and Its Dependence on the Transverse Magnetic Field
- Sound Velocity Transit of High Field Domain in GaAs under Acoustoelectric Oscillation
- Continuous Current Oscillation in GaAs Caused by Acoustoelectric Effect
- Frequency Spectrum of Microwave Emission from GaAs
- Depletion-Layer Transduction of Surface Waves on Piezoelectric Semiconductor
- Fluxon Transfer Device
- Fluxon Divider
- Fluxon Feedback Oscillator
- Fluxon Observation Using a Josephson Sampler
- Nb/Al-oxide/Nb Tunnel Junctions for Josephson Integrated Circuits
- A New Josephson Timed Inverter with Four-Junction Logic (4JL) Gate
- Sub-10 ps Logic Operations in Josephson Four-Junction Logic (4JL) Gates
- A Josephson Full Adder Circuit Using Four-Junction Logic (4JL) Gates : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION
- Operating Characteristics of Josephson Four-Junction Logic (4JL) Gate
- Josephson Tunnel Junctions with Nb, NbN Double-Layered Electrodes
- Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon Barriers
- Current Injection Logic Gate with Four Josephson Junctions : C-2: JOSEPHSON DEVICES
- Fabrication of High Quality NbN/Pb Josephson Junction : C-2: JOSEPHSON DEVICES
- Photoenhancement of Surface Wave Convolution on GaAs
- A Direct Coupled Josephson Sampler
- Recent Advances in Josephson Material and Device : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION