Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon Barriers

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概要

• 論文の詳細を見る

• The tunneling characteristics have been systematically measured for NbN/NbN Josephson tunnel junctions with glow-discharge-produced amorphous silicon layers as tunneling barriers. Junction quality parameters, the junction capacitance and the maximum Josephson current density have been obtained as a function of the thickness of the amorphous silicon layer. It is shown that a significant improvement in tunneling characteristics can be achieved by using an amorphous silicon barrier.

• 社団法人応用物理学会の論文
• 1981-08-05

著者

• Shoji A

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Shoji Akira

  Electrotechnical Laboratory

• HAYAKAWA Hisao

  Electrotechnical Laboratory

• Hayakawa H

  Nagoya Univ. Nagoya Jpn

• KOSAKA Shin

  Electrotechnical Laboratory

• Kosaka S

  Energy Technology Research Institute Aist Tsukuba Central

• SHINOKI Fujitoshi

  Electrotechinical Laboratory

• Shinoki F

  Aomori Advanced Industrial Technol. Center Aomori Jpn

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