Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching : B-6: SEMICONDUCTOR LASERS (I)
スポンサーリンク
概要
著者
-
Shoji Akira
Electrotechnical Laboratory
-
SAKAMOTO Tsunenori
Electrotechnical Laboratory
-
Iida Hideyo
Electrotechnical Laboratory
-
Tarui Yasuo
Electrotechnical Lab.
-
KOMIYA Yoshio
Electrotechnical Lab.
-
Komiya Yoshio
Electrotechnical Laboratory
関連論文
- Regulated Epitaxy of YBa_2Cu_3O_ by Atomic Control of Step Arrays on Vicinal SrTio_3(100) Substrates
- Control of Step Arrays on Normal and Vicinal SrTiO_3 (100) Substrates
- Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Dependence of Electrical Characteristics of NbN/TiN/NbN Josephson Junctions on Barrier Thickness and Temperature
- Uniformity of Overdamped NbCN/TiN/NbCN Josephson Junctions
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- New Fabrication Process for Small Junctions Using a Selective Etch-Back Technique
- Stress in NbC_xN_ Films Prepared by Reactive Rf Magnetron Sputtering
- Magnetic Penetration Depths and Normal-State Resistivities of Epitaxial and Polycrystalline NbC_xN_ Films
- Numerical Analysis of Synchronous Switching in Double-Barrier Josephson Junctions
- Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
- Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS
- Magnetic Isolation on a Superconducting Ground Plane
- Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
- Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
- Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition
- Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Scanning Tunneling Microscopy of Anisotropic Monatomic Steps on a Vicinal Si(001) - 2 × 1 Surface
- Nb/Al-oxide/Nb and NbN/MgO/NbN Tunnel Junctions in Large Series Arrays for Voltage Standards
- Structural Model for the Negative Electron Affinity Surface of O/Cs/Si(001)2×1
- Electronic Structures of the Single-Domain Si(001)2×1 and 2×8 Surfaces
- Integrated DC-SQUID Magnetometer
- Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching : B-6: SEMICONDUCTOR LASERS (I)
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates
- Josephson Tunnel Junctions with Nb, NbN Double-Layered Electrodes
- Tunneling Characteristics of NbN/NbN Josephson Junctions with Glow-Discharge-Produced Amorphous Silicon Barriers
- Comparison between the Experimental and Theoretical Sodium Distribution in Silicon Oxide
- Thermal Analysis and Experimental Evaluation of Melting Threshold Energy of Si Thin Film Structure in Laser Annealing
- Pattern Laser Annealing by a Pulsed Laser
- The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure
- Transient Phenomena in the Backward Direction of Germanium Crystal Rectifiers
- High Impurity Doping in Si-MBE Using Liquid Ga Ion Source
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
- Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy