Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
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概要
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Si(001)-2×1 single-domain structure has been observed by reflection high-energy electron diffraction (RHEED) after a substrate annealing at a temperature of 1000℃ for 20 min. This implies surface steps have been changed from monatomic layer to biatomic layer height by the annealing. It was found that the single-domain 2×1 surface structure is a necessary condition to observe stable RHEED intensity oscillations on the Si(001) surface during the growth.
- 社団法人応用物理学会の論文
- 1986-01-20
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