SAKAMOTO Tsunenori | Electrotechnical Laboratory

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概要

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著作論文

Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
V-Shaped Gate High Electron Mobility Transistor (VHEMT)
Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
Ge Distribution in Ge_n/Si_m Strained-Layer Superlattices
Phase-Locked Epitaxy Using RHEED Intensity Oscillation
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
Ge Epitaxial Overlayers on Si(001) Studied by Surface-Sensitive X-Ray Absorption Fine Structure: Evidence for Strain-Induced Surface Rearrangement
Heterointerfaces in Strained-Layer Superlattices Studied by Surface-Sensitive XAFS
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
Scanning Tunneling Microscopy of Anisotropic Monatomic Steps on a Vicinal Si(001) - 2 × 1 Surface
Structural Model for the Negative Electron Affinity Surface of O/Cs/Si(001)2×1
Electronic Structures of the Single-Domain Si(001)2×1 and 2×8 Surfaces
Monolithic Passivated Stripe Geometry Double Heterostructure Injection Lasers by Selective Chemical Etching : B-6: SEMICONDUCTOR LASERS (I)
Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates
High Impurity Doping in Si-MBE Using Liquid Ga Ion Source
Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing
Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy

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