SUZUKI Eiichi | Electron Devices Division, Electrotechnical Laboratory

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著作論文

Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy

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