Sekigawa T | Electron Devices Division Electrotechnical Laboratory

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著作論文

Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon
Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
Surface Passivation of Thin Silicon Solar Cells Using Silicon-on-Insulator Wafer

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