YAMANAKA Mitsuyuki | Device Synthesis Section, Electrotechnical Laboratory
スポンサーリンク
概要
関連著者
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Sakata I
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Sakata Isao
Device Synthesis Section Electrotechnical Laboratory
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Sakata Isao
Electron Devices Division Electrotechnical Laboratory
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YAMANAKA Mitsuyuki
Device Synthesis Section, Electrotechnical Laboratory
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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林 康明
京都工芸繊維大学大学院
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林康 明
京都工芸繊維大学工芸学部電子情報工学科
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林 康明
京都工芸繊維大学大学院工芸科学研究科
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Hayashi Yutaka
Device Synthesis Section Electrotechnical Laboratory
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Hayashi Yuzo
Irie Koken Co. Ltd.
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NUMASE Shoji
Device Synthesis Section, Electrotechnical Laboratory
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ISHIDA Takeshige
Device Synthesis Section, Electrotechnical Laboratory
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OKAZAKI Satoru
Device Synthesis Section, Electrotechnical Laboratory
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SEKIGAWA Toshihiro
Device Synthesis Section, Electrotechnical Laboratory
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OKAZAKI Shoji
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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Sekigawa Toshihiro
Electron Devices Division Electrotechnical Laboratory
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Numase Shoji
Device Synthesis Section Electrotechnical Laboratory
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Okazaki S
Osaka Univ. Osaka Jpn
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Sekigawa T
Electron Devices Division Electrotechnical Laboratory
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Ishida Takeshige
Device Synthesis Section Electrotechnical Laboratory
著作論文
- In Situ Hydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
- Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method
- Constant-Photocurrent-Method (CPM) Studies on Light-Induced Changes in Hydrogenated Amorphous Silicon
- Origin of the Reduction of Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination
- Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH_4
- Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon
- Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon