Okunuma H | National Institute Of Advanced Industrial Science And Technology

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概要

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著作論文

Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
Effects of High-k Passivation Films on AlGaN/GaN HEMT
p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
C-V Characteristics of MOS Structures Fabricated of Al-Doped p-Type 3C-SiC Epilayers Grown on Si by Chemical Vapor Deposition
Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
Nitridation of Gaps (001) Surface Studied by Auger Electron Spectroscopy
Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
Energy Shifts of Auger Transitions of Ga, As and N during Plasma-assisted Nitridation of GaAs (001) Surface
Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs

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