Shimizu M | Tokyo Inst. Technology Yokohama
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概要
関連著者
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Shimizu M
Tokyo Inst. Technology Yokohama
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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藤沢 浩訓
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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舟窪 浩
東京工業大学大学院 総合理工学研究科 物質科学創造専攻
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Fujisawa Hironori
Graduate School Of Engineering University Of Hyogo
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
兵庫県立大学大学院 工学研究科
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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FUJISAWA Hironori
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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SHIMIZU Masaru
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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藤沢 浩訓
兵庫県立大学大学院 工学研究科
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岡庭 守
姫路工業大学大学院工学研究科
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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本田 耕一郎
富士通研究所
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NIU Hirohiko
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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本田 耕一郎
富士通研
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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Niu Hirohiko
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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IDE Toshihide
Department of Electronics and Communications, School of Science and Technology, Meiji University
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Ide Toshihide
Department Of Electrical And Computer Engineering Yokohama National University
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Niu Hirohiko
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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野々村 哉
姫路工業大学大学院工学研究科電気系工学専攻
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野々村 哉
姫路工業大学大学院工学研究科 電気系工学専攻
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NEMOTO Toshio
Department of Electronics and Communications, School of Science and Technology, Meiji University
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SHEN Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Nemoto Toshio
Department Of Science And Technology Graduate School Of Meiji University
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Nemoto T
Bunkyo University
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Nemoto Toshio
Department Of Business And Information Faculty Of Information And Communication Bunkyo University
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TAKAHASHI Kenji
Department of Radiological Life Sciences, Hirosaki University Graduate School of Health Sciences
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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藤沢 浩訓
姫路工大・工学研究科
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清水 勝
姫路工大・工学研究科
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Katoda Takashi
Dep. Of Electronic And Photonic Systems Engineering Kochi Univ. Of Technol.
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SAITO Keisuke
Application Laboratory
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Saito Keisuke
Application Laboratory Analytical Division Philips Japan Ltd.
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Saito K
Institute Of Industrial Science University Of Tokyo
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Cho D‐h
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OHASHI Hiromichi
National Institute of Advanced Industrial Science and Technology
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SUZUKI Akira
Graduate School of Engineering, Tokai University
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Takahashi Kenji
Department Of Orthopaedics Graduate School Of Medical Science Kyoto Prefectural University Of Medici
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Saito Kenichi
Institute Of Industrial Science University Of Tokyo
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Takahashi K
Dep. Of Electronic And Photonic Systems Engineering Kochi Univ. Of Technol.
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Saito Kunio
Ntt Microsystem Integration Laboratories
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Saito K
Akita Univ. Akita Jpn
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Oikawa Takahiro
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Jeganathan K
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology C
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Saito Keisuke
Application Laboratory Bruker Axs
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Suzuki Akira
R&d Association For Future Electron Devices
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Takahashi Kenji
Department Of Biophysics And Biochemistry Graduate School Of Science The University Of Tokyo
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Takahashi Kenji
Department Of Atomic Science And Nuclear Engineering Faculty Of Engineering Hokkaido University
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Suzuki Akira
Graduate School Of Engineering Hokkaido University
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Kimura Takeshi
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Takahashi Kenji
Department Of Applied Biological Chemistry Graduate School Of Agriculture Kinki University
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Saito Kaichi
Kanagawa Industrial Technology Center
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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渡辺 和人
都立産技高専
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山崎 貴司
富士通研究所
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小高 康稔
富士通研究所
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Matsuura Osamu
Department Of Urology Shakai Hoken Chukyo Hospital
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Matsuura Osamu
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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HONDA Koichiro
Fujitsu Laboratories Ltd.
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山崎 貴司
東理大理
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渡辺 和人
産業技術高専
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藤沢 浩訓
兵庫県大
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清水 勝
兵庫県大
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻
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NONOMURA Hajime
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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丹生 博彦
姫路工大・工学研究科
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小高 康稔
東大工
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松岡 裕益
姫路工業大学工学部電子工学科
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HONDA Kazutaka
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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村田 周平
姫路工業大学工学部電子工学科
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板東 達也
姫路工業大学工学部電子工学科
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八木 達也
姫路工業大学大学院工学研究科電気系工学
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Tanaka M
Mitsubishi Electric Co. Ltd. Hyogo Jpn
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Hara S
Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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Honda Koichiro
Fujitsu Lab. Ltd. Kanagawa Jpn
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Honda K
Fujitsu Laboratories Ltd.
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OIKAWA Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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KOBUNE Masafumi
Department of Material Science Chemistry, Graduate School of Engineering, University of Hyogo
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KANEKO Satoru
Kanagawa Industrial Technology Research Institute
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HARA Shinji
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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CHO Dong-Hyun
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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JEGANATHAN Kulandaivel
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHEN Xu-Qiang
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OOKITA Hideyuki
Science University of Tokyo
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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YAMAMOTO Yuki
National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
National Institute of Advanced Industrial Science and Technology
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HIRATA Yoshitaka
Department of Science and Technology, Graduated School of Meiji University
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PIAO Guanxi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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YAGI Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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INADA Masaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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PIAO Guanxi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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ARAI Kazuo
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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CHO Hyung-Koun
Department of Metallurgical Engineering, Dong-A University
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JEGANATHAN Kulandaivel
Power Electronics Research Center, National institute of Advanced industrial Science and Technology,
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SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
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SHIMIZU Mitsuaki
Electrotechnical Laboratory (ETL)
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SHEN Xu-Qiang
Electrotechnical Laboratory (ETL)
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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SHIMIZU Mitsuaki
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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MATSUZAKI Tomoaki
Department of Applied Chemistry Faculty of Engineering, Himeji Institute of Technology
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SAWADA Tatsuya
Department of Applied Chemistry Faculty of Engineering. Himeji Institute of Technology
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Okumura Hajime
Electrotechnical Laboratory
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GIKAWA Takahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Nonomura Hajime
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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岡庭 守
姫路工業大学工学部電子工学科
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Arai Kazuo
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Iga Kenichi
Tokyo Institute Of Technology
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Cho Hyung-koun
Department Of Metallurgical Engineering Dong-a University
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Oikawa Tetsuo
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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OKANIWA Mamoru
Department of Electrical, Electronic and Computer Engineering, Graduate School of Engineering, Himej
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KITA Kentaro
Department of Electronics, Faculty of Engineering, HimeJi Institute of Technology
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Kobune M
Dep. Of Materials Sci. And Chemistry Univ. Of Hyogo
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Piao Guanxi
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Kita Kentaro
Department Of Electronics Faculty Of Engineering Himeji Institute Of Technology
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Jeganathan Kulandaivel
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Matsuzaki T
Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Oikawa T
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Okaniwa Mamoru
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Himeji I
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Hirata Yoshitaka
Department Of Science And Technology Graduated School Of Meiji University
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Gikawa Takahiro
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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小高 康稔
富士通研
著作論文
- MOCVD法により形成したPbTiO_3自己集合島の構造制御(新型不揮発性メモリー)
- 強誘電体ナノワイヤ及びナノアイランドの自発分極に関する研究 (平成21年度研究報告)
- ナノ強誘電体の基礎物性 : 現状と将来展望
- MOCVD法によるPbTiO_3ナノ島作製とその強誘電性
- 24pYE-6 圧電応答顕微鏡でみる分域像(強誘電体分域の測定法の新展開と新しい分域像,シンポジウム,領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- MOCVD法によるナノサイズ強誘電体の作製とその物性
- 強誘電体ナノ構造の作製とその物性
- 19aXC-4 HAADF STEM法を用いたSrTiO_3(100)/PbTiO_3強誘電体薄膜の原子構造組成解析(X線・粒子線(電子線),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 21pYN-2 強誘電体極薄膜及びナノ構造の作製とその物性(領域10シンポジウム : 強誘電体薄膜および界面における新しい現象とその応用,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- MOCVD法による強誘電体ナノ構造の形成とその物性(新型不揮発性メモリ)
- 29pXH-2 自己組織化による強誘電体PbTiO_3ナノ構造の形成と構造制御(領域10シンポジウム : ナノスケール構造を利用した物質創製-材料種の枠を超えて)(領域10)
- 圧電応答顕微鏡による強誘電体薄膜の観察と評価
- 21pXC-7 圧電応答顕微鏡による強誘電体薄膜の分極反転過程の観察と評価
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3極薄膜のエピタキシャル成長と電気的特性(物性,成膜,加工,プロセス : 強誘電体薄膜とデバイス応用)
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- I層にMgOを用いたMIS及びMFIS構造の作製とその評価
- Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
- Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
- High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
- Polarization Characteristics of MOCVD Grown GaAs/GaAlAs CBH Surface Emitting Lasers
- Microstructure and Electrical Properties of (Pb, La)(Zr. Ti)O_3 Films Crystallized from Amorphous State by TWO-Step Postdeposition Annealing
- MOCVD法によるPb(Zr,Ti)0_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と特性の改善(圧電デバイス・材料,強誘電体材料,有機エレクトロニクス,一般)
- MOCVD法によるPb(Zr,Ti)O_3薄膜の低温成長と核付けが及ぼす効果
- Thermal Stability of SrRuO_3 Bottom Electrode and Electric Property of Pb(Zr, Ti)O_3 Thin Film Deposited on SrRuO_3
- 圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(半導体エレクトロニクス)
- Effect of Strain in Epitaxially Grown SrRuO_3 Thin Films on Crystal Structure and Electric Properties
- Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition
- Epitaxial Growth and Ferroelectric Properties of the 20-nm-Thick Pb(Zr, Ti)O_3 Film on SrTiO_3(100) with an Atomically Flat Surface by Metalorganic Chemical Vapor Deposition
- Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O_3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition