PIAO Guanxi | National Institute of Advanced Industrial Science and Technology
スポンサーリンク
概要
関連著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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Shimizu M
Tokyo Inst. Technology Yokohama
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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HIRATA Yoshitaka
Department of Science and Technology, Graduated School of Meiji University
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PIAO Guanxi
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Hirata Yoshitaka
Department Of Science And Technology Graduated School Of Meiji University
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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SHIMIZU Mitsuaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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YAMAMOTO Yuki
National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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YAGI Shuichi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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INADA Masaki
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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PIAO Guanxi
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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OKUMURA Hajime
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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ARAI Kazuo
Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Piao Guanxi
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
著作論文
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
- Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs