Yano Yoshiki | Tsukuba Laboratory Taiyo Nippon Sanso Corporation

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著作論文

Effects of High-k Passivation Films on AlGaN/GaN HEMT
p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

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