SHIMIZU Mitsuaki | National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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概要
- 同名の論文著者
- National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research Cの論文著者
関連著者
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Yano Yoshiki
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Inada Masaki
National Institute Of Advanced Industrial Science And Technology
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YANO Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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Okumura Hajime
National Institute Of Advanced Industrial Science And Technology
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Akutsu Nakao
Tsukuba Laboratory Taiyo Nippon Sanso Corporation
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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YAGI Shuichi
National Institute of Advanced Industrial Science and Technology
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AKUTSU Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation
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Sazawa Hiroyuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Hata Masahiko
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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IDE Toshihide
Department of Electronics and Communications, School of Science and Technology, Meiji University
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OHASHI Hiromichi
National Institute of Advanced Industrial Science and Technology
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PIAO Guaxi
National Institute of Advanced Industrial Science and Technology
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PIAO Guanxi
National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHEN Xu-Qiang
National Institute of Advanced Industrial Science and Technology
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SHIM Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST)
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Ide Toshihide
Department Of Electrical And Computer Engineering Yokohama National University
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Hata Masahiko
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Yamamoto Taiki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Nishikawa Naohiro
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Kiuchi Maki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
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Inoue Takayuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
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NEMOTO Toshio
Department of Electronics and Communications, School of Science and Technology, Meiji University
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SAKURAI Takeaki
Institute of Scientific and Industrial Research, Osaka University
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Cho D‐h
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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OOKITA Hideyuki
Science University of Tokyo
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Shimizu Mitsuaki
National Institute Of Advanced Industrial Science And Technology
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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YAMAMOTO Yuki
National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
National Institute of Advanced Industrial Science and Technology
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SUZUKI Akira
Graduate School of Engineering, Tokai University
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SAZAWA Hiroyuki
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HONDA Yoshiaki
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HATA Masahiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HASEGAWA Akira
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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HAMAMATSU Hiroshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
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AKIMOTO Katsuhiko
Institute of Applied Physics, University of Tsukuba
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Honda Yoshiaki
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Cho Dong-hyun
National Institute Of Advanced Industrial Science And Technology (aist)
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Shimizu M
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Arai Kazuo
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Nemoto Toshio
Department Of Science And Technology Graduate School Of Meiji University
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Nemoto T
Bunkyo University
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Nemoto Toshio
Department Of Business And Information Faculty Of Information And Communication Bunkyo University
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Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
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Yagi Syuichi
National Institute Of Advanced Industrial Science And Technology
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Hamamatsu Hiroshi
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Sakurai Takeaki
Institute Of Applied Physics University Of Tsukuba
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Suzuki Akira
R&d Association For Future Electron Devices
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Suzuki Akira
Graduate School Of Engineering Hokkaido University
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Okumura Hajime
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Akutsu Nakao
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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Yagi Syuichi
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Cho Dong-Hyun
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Yano Yoshiki
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan
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Ide Toshihide
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ide Toshihide
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 300-1295, Japan
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Takahashi Tokio
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kawashima Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Mitsuaki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Shim Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST), Power Electronics Research Center (PERC), Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition
- Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
- p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition