Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-08-25
著者
-
SAKURAI Takeaki
Institute of Scientific and Industrial Research, Osaka University
-
SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
-
OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
-
Shimizu Mitsuaki
National Institute Of Advanced Industrial Science And Technology
-
SAZAWA Hiroyuki
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
HONDA Yoshiaki
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
HATA Masahiko
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
HASEGAWA Akira
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
HAMAMATSU Hiroshi
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.
-
AKIMOTO Katsuhiko
Institute of Applied Physics, University of Tsukuba
-
Okumura Hajime
National Inst. Of Advanced Sci. And Technol. Ibaraki Jpn
-
Honda Yoshiaki
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
-
Hata Masahiko
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
-
Hamamatsu Hiroshi
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
-
Sakurai Takeaki
Institute Of Applied Physics University Of Tsukuba
-
Sazawa Hiroyuki
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
-
Hata Masahiko
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
関連論文
- SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
- SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
- AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
- Alignment of Surface-Stabilized Ferroelectric Liquid Crystal by the Self-Assembled Monolayers of Amphiphilic Diacetylene Derivatives
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
- Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
- A Crystallographic Study on the Deactivation Temperature of Crystal Nucleating Agents for Supercooled Sodium Acetate Trihydrate
- Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
- Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy
- Depth Profiling of Si/Si_Ge_x Structures by Micro-Raman Imaging
- Interaction of Bathocuproine with Ca and Au Studied by Density Functional Theory
- Ultraviolet Photoemission Study of Interaction between Bathocuproine and Calcium
- Electronic Structure of Bathocuproine on Metal Studied by Ultraviolet Photoemission Spectroscopy
- Influence of 3,4,9,10-Perylene Tetracarboxylic Dianhydride Intermediate Layer on Molecular Orientation of Phthalocyanine
- Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures
- Comparative Study on Structural Properties of Poly(3-hexylthiophene) and Poly(3-hexylthiophene):6,6-Phenyl-C61 Butyric Acid Methyl Ester Thin Films Using Synchrotron X-ray Diffraction
- Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2
- The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
- In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
- The Effect of n-GaAs Carrier Concentration on Current Gain in InGaP/GaAs Heterojunction Bipolar Transistors
- Molecular Orientation Control of Phthalocyanine Thin Film by Inserting Pentacene Buffer Layer
- Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
- Growth Process of Phthalocyanine Films Deposited on 3,4,9,10-Perylene Tetracarboxylic Dianhydride Template Layers
- Electronic Structure and Spontaneous Polarization in Sc
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition
- Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
- Structural and Optical Properties of Phthalocyanine Thin Films Grown on Glass with 3,4,9,10-Perylene Tetracarboxylic Dianhydride Intermediate Layer
- p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors
- Electronic Structure and Spontaneous Polarization in Sc[x]Al[y]Ga₁₋x₋yN Alloys Lattice-Matched to GaN : A First-Principles Study (Special Issue : Recent Advances in Nitride Semiconductors)
- Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition
- Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication