Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
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概要
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Surface/interface segregation of indium in InGaP layers grown by metalorganic vapor phase epitaxy has been studied. Al/InGaP Schottky barrier height ($\Phi_{\text{B}}$) measurement was used for the evaluation of the segregation. It is shown that $\Phi_{\text{B}}$ of GaAs/InGaP/GaAs double heterostructure (DH) is larger than that of InGaP/GaAs single heterostructure (SH), suggesting the diffusion of indium into upper GaAs layer. It is shown that the indium segregation progresses at the initial stage of InGaP growth and saturates when the InGaP thickness reaches about 15 nm. Using the segregation model, we calculated the exchange coefficient of indium as 0.76 at 620 °C.
- 2011-01-25
著者
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Nakano Takayuki
Department Of Biosciences Teikyo University
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Sugiyama Masakazu
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Fukuhara Noboru
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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Ichikawa Osamu
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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Hata Masahiko
Tsukuba Material Development Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
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Nakano Takayuki
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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