Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
スポンサーリンク
概要
- 論文の詳細を見る
Growth of an AlP epitaxial layer on the top of GaAs was proposed as a novel in situ passivation method. The AlP layer was almost converted to AlOx upon air exposure, forming a part of a gate dielectric. Removal of AlAs at the GaAs/AlP interface was mandatory for avoiding As-oxide formation upon air exposure, which necessitated complete As removal from the surface when switching growth from GaAs to AlP. H2S treatment allowed us to obtain low-As-content $c(8{\times}2)$ surface reconstruction for the first time with metalorganic vapor phase epitaxy (MOVPE). AlP on the $c(8{\times}2)$ GaAs surface has made it possible to obtain a smooth morphology and complete suppression of arsenic oxide. PL intensity increased by a factor of three with the AlP growth for 10 s at 500 °C, corresponding to a thickness of 0.5 nm. Accumulation capacitance obtained from capacitance–voltage ($C$–$V$) curves was the largest with that growth a condition of AlP, suggesting reduction in interface states.
- 2010-04-25
著者
-
Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Terada Yuki
Department Of Agricultural Chemistry Faculty Of Agriculture Meiji University
-
Yukihiro Shimogaki
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
-
Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
-
Masakazu Sugiyama
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan
-
SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
関連論文
- Importance of the Retro-Mammary Space as a Route of Breast Cancer Metastasis
- Histologic Examination of Two Cases of Cystosarcoma Phyllodes with Pulmonary Metastases
- Identification of Pathologic Parathyroid Glands in Patients with Primary Hyperparathyroidism
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- LAPAROSCOPIC TREATMENT FOR PERFORATED APPENDICITIS WITH PELVIC ABSCESS
- Efficacy of Absorbable Clips Compared with Metal Clips for Cystic Duct Ligation in Laparoscopic Cholecystectomy
- Laparoscopic Wedge Resection for Gastric Perforation After Endoscopic Mucosal Resection : Report of a Case
- Solitary Splenic Metastasis from Ovarian Cancer Successfully Treated by Hand-Assisted Laparoscopic Splenectomy : Report of a Case
- The Usefulness, Indications, and Complications of Laparoscopy-Assisted Colectomy in Comparison with Those of Open Colectomy for Colorectal Carcinoma
- Structures and Electrical Properties of β- and θ-(BTM-TTP)_2SbF_6
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- GaN-Based High-Speed Intersubband Optical Switches
- Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life Test
- Aging Behavior of Ni-Electrode Multilayer Ceramic Capacitors with X7R Characteristics
- Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier
- Wide-Angle Coupling to Multi-Mode Interference Devices : A Novel Concept for Compacting Photonic Integrated Circuits
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
- Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Deposition of wsi_x Films from Preactivated Mixture of WF_6/SiH_4
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C_4F_6, by Plasma Enhanced Chemical Vapor Deposition
- Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
- Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
- Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
- Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
- Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers
- Novel Precursors for SiCH Low-$k$ Caps beyond the 22 nm Node: Reactions of Silacyclopentane Precursors in the Plasma-Enhanced Chemical Vapor Deposition Process and Structural Analyses of SiCH Films
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
- Source Gas Dependency of Amorphous Fluorinated Carbon Film Properties Prepared by Plasma Enhanced Chemical Vapor Deposition Using C4F8, C4F6, and C5F8 Gases
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- GaInAsP/InP Directional Coupler Loaded with Grating for Optically-Controlled Switching(Special Issue on Recent Progress of Integrated Photonic Devices)
- 1.55 μm InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation
- Development of Metal-Organic Vapor Phase Diffusion Enhanced Selective Area Epitaxy, a Novel Metal-Organic Vapor Phase Epitaxy Selective Area Growth Technique, and Its Application to Multi-Mode Interference Device Fabrication
- Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
- Physical and Chemical Contributions of Interfacial Impurities to Film Adhesion : Surfaces, Interfaces, and Films
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Four Channel Ridge DFB Laser Array for 1.55μm CWDM Systems by Wide-Stripe Selective Area MOVPE(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Adhesion Characteristics between Chemical Vapor Deposited Cu and TiN Films : Aspects of Process Integration
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
- Measurement of Focusing Properties of Axially Asymmetric Lenses Using Moire Technique
- Low-Concentration Cadmium Diffusion into GaAs
- Application of Modern Control Theory to Temperature Control of the MBE System
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl4 and NH3 by Introducing Ar Purge Time
- Dietary Vitamin E Deficiency Increases Anxiety-Like Behavior in Juvenile and Adult Rats
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
- Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
- Nucleation of W during Chemical Vapor Deposition from WF6 and SiH4
- Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
- Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Zn and S Doping in GaAs Selective Area Growth by Metal–Organic Vapor Phase Epitaxy
- Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide
- Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
- Surface Micromachining in Optical Isolator with Semiconductor Guiding Layer for Enhancement of Magnetooptic Effect
- The Fabrication of Hafnium Nitride by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor for Gate-Electrode Application
- Material Consideration on Ta, Mo, Ru, and Os as Glue Layer for Ultra Large Scale Integration Cu Interconnects
- Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique
- In situ Observation of Initial Nucleation and Growth Processes in Supercritical Fluid Deposition of Copper
- Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
- Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
- Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution
- InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
- Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition
- Initial Cu Growth in Cu-Seeded and Ru-Lined Narrow Trenches for Supercritical Fluid Cu Chemical Deposition
- Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy