Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2

スポンサーリンク

概要

• 論文の詳細を見る

• Metalorganic chemical vapor deposition (MOCVD) of Al2O3 thin films using dimethylaluminumhydride (DMAH) and O2 as precursor and oxidant, has respectively been performed on Si substrate. Compared with some reported results, Al2O3 films with low carbon content and suppressed interfacial layer using this new chemistry can be obtained at a low deposition temperature. Growth kinetics study indicates that these kinetic behaviors follow the Langmuir–Hinshelwood mechanism. Process optimization suggests that high-quality Al2O3 films with low carbon content and high refractive index, as well as the suppressed interfacial layer thickness of 0.2 nm, can be deposited at the substrate temperature of 300 °C and oxygen partial pressure of 1.6 Torr. On the basis of our investigation, it can be concluded that the MOCVD-derived Al2O3 films on Si grown by the new CVD chemistry show reasonable properties as promising candidates for high-$k$ gate dielectrics.

• 2010-03-25

著者

• He Gang

  Department Of Applied Chemistry The University Of Tokyo

• Wang Xiaoliang

  Department Of Chinese Pharmacy P.o.b.3 Beijing University Of Traditional Chinese Medicine

• Oshima Masaharu

  Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo

• Yukihiro Shimogaki

  Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Xiaoliang Wang

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Gang He

  Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• OSHIMA Masaharu

  Department of Applied Chemistry and JST-CREST, The University of Tokyo

関連論文

• Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
• Fabrication and Characterization of AlN/InN Heterostructures
• Antiferromagnetic Domain Structure Imaging of Cleaved NiO(100) Surface Using Nonmagnetic Linear Dichroism at O K Edge : Essential Effect of Antiferromagnetic Crystal Distortion(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Prop
• Electronic Band Structure of Transparent Conductor : Nb-Doped Anatase TiO_2
• Temperature-Dependent Soft X-ray Photoemission and Absorption Studies of Charge Disproportionation in La_Sr_xFeO_3(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
• Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
• Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
• InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
• Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
• Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
• The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
• Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
• Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
• Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
• New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
• Nasal Recombinant Hirudin-2 Delivery : Absorption and Its Mechanism in Vivo and in Vitro Studies(Biopharmacy)
• Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
• Acceleration of Water Column and Generation of Large Flow Rate Water Spray by Shock Tube
• Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
• Spectro-Diffractometry for Chemical-State Analysis Based on In-Advance Simulations
• In-Advance Simulation and Chemical State Analysis by Spectro-Diffractometry
• Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
• GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
• Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
• Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
• Possibility of the Discrimination of Different Chemical States by Energy-Dispersive X-Ray Spectroscopy
• Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces
• Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
• Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment
• Metalorganic Chemical Vapor Deposition of Al2O3 Thin Films from Dimethylaluminumhydride and O2
• Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
• Altered mRNA Expression of ATP-Sensitive and Inward Rectifier Potassium Channel Subunits in Streptozotocin-Induced Diabetic Rat Heart and Aorta
• Characteristics of $m$-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
• Hard X-ray Photoelectron Emission Microscopy as Tool for Studying Buried Layers
• Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO
• Magnetic Domain Imaging of Ni Micro Ring and Micro Dot array by Photoelectron Emission Microscopy
• Systematic Analysis of ARPES Spectra of Transition-Metal Oxides: Nature of Effective $d$ Band
• Room-Temperature Epitaxial Growth of High-Quality $m$-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
• Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition
• Initial Cu Growth in Cu-Seeded and Ru-Lined Narrow Trenches for Supercritical Fluid Cu Chemical Deposition
• Layer-by-Layer Growth of InAlN Films on ZnO($000\bar{1}$) Substrates at Room Temperature
• Structural Properties of m-Plane InAIN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers

もっと見る 閉じる

スポンサーリンク