Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy
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概要
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A kinetic analysis of the surface adsorption layer of III/V semiconductors in metalorganic vapor phase epitaxy (MOVPE) was carried out by monitoring the temporal behavior of surface reconstruction that is assumed to be maintained during growth with the adsorption layers. A GaAs(001) surface was observed in situ using reflectance anisotropy spectroscopy (RAS), and both spectroscopic and kinetic analyses were performed when trimethylgallium (TMGa) was supplied intermittently while the supply of tertiarybutylarsine (TBAs) was continuous. When the flow of TMGa was switched on/off, the transient RA signal exhibited time constants of 0.2–20 s. By observing the dependence of these time constants on the partial pressure of TMGa and substrate temperature, we considered that the time constant ($t_{0}$) at the start of TMGa supply corresponds to the adsorption of Ga from the gas phase to the adsorption layer, and two constants (i.e., $t_{1}$ and $t_{2}$) at the end of TMGa supply are associated with the crystallization of adsorbed Ga and the recovery of surface reconstruction, respectively. The equivalent thickness of the adsorption layer was estimated to be 0.19 monolayer thickness at 550 °C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Nakano Takayuki
Department Of Biosciences Teikyo University
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Deura Momoko
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Sugiyama Masakazu
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Shimogaki Yukihiro
Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Deura Momoko
Department of Electronic Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Sugiyama Masakazu
Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Shimogaki Yukihiro
Department of Materials Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Shimogaki Yukihiro
Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,
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Deura Momoko
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
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SHIMOGAKI YUKIHIRO
Department of Chemical Engineering, University of Tokyo
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