Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode
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概要
- 論文の詳細を見る
A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In order to clarify its basic characteristics, the differences in Schottky junctions were evaluated using the semiconductor capacitance dependence on voltage. The Mott--Schottky relationship of a thin AlGaN layer on GaN was different from that of GaN bulk. The Schottky junctions were formed not only by using an electrolyte contact, but also by using a metal electrode to evaluate the effects of the semiconductor--electrolyte interface. Although diffusions of ions and solvents occur in the electrolyte, the Mott--Schottky plot measured for the electrolyte system showed a similar voltage dependence slope to that measured with a metal contact. This indicates that an electrolyte has a limited effect on the depletion behavior of the semiconductor heterojunction electrode.
- The Japan Society of Applied Physicsの論文
- 2013-08-25
著者
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology (rcast) At The University Of Tokyo
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Nakamura Akihiro
Department Of Applied Chemistry And Biotechnology Faculty Of Engineering Yamanashi University
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Fujii Katsushi
Research Center for Advanced Science and Technology, The University of Tokyo, Meguro, Tokyo 153-8904, Japan
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Sugiyama Masakazu
Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-866, Japan
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