High Rate and Highly Selective SiO_2 Etching Employing Inductively Coupled Plasma

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-04-30

著者

• 堀池 靖浩

  物質･材料研究機構

• Shindo H

  Tokai Univ. Hiratsuka Jpn

• Shindo H

  Samsung Yokohama Res. Inst. Yokohama Jpn

• HORIIKE Yasuhiro

  Department of Electrical Engineering, Toyo University

• Shindo Haruo

  Faculty of Agriculture, Yamaguchi University

• FUKASAWA Takayuki

  Department of Electrical Engineering, Hiroshima University

• NAKAMURA Akihiro

  Department of Electrical Engineering, Hiroshima University

• Nakamura A

  Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University

• Shindo H

  Department Of Electronics Faculty Of Engineering Hiroshima University

• Horiike Yasuhiro

  Faculty Of Engineering Toyo University

• Horiike Yasuhiro

  National Institute For Materials Science

• Horiike Yasuhiro

  Department Of Electrical & Electronics Engineering Tokyo University

• Horiike Yasuhiro

  Faculty Of Engineering Hiroshima University

• Horiike Yasuhiro

  Department Of Electrical Engineering Toyo University

• Narai Akira

  Faculty Of Engineering Hiroshima University

• Fukasawa Takayuki

  Faculty Of Engineering Fukuyama University:(present Address)2nd Development Engineering Dpt. Tokyo E

• Shindo Haruo

  Faculty Of Agriculture Nagoya University : (present Address) Faculty Of Agriculture Yamaguchi Univer

• 堀池 靖浩

  広島大工

• Fukasawa Teruichiro

  Department Of Physics Science University Of Tokyo:(permanent Address)toshiba Manufacturing Engineeri

• Shindo Haruo

  Faculty Of Agriculture Nagoya University

• Nakamura Akihiro

  Department Of Applied Chemistry And Biotechnology Faculty Of Engineering Yamanashi University

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